TSMC 2nm (N2) technology development is on track and made good progress. N2 technology features the company’s first generation of nanosheet transistor technology with full-node strides in performance and power consumption. Volume production is expected in 2025.
Major customers completed 2nm IP design and started silicon validation. TSMC also developed low resistance RDL (redistribution layer), super high performance metal-insulator-metal (MiM) capacitors to further boost performance.
TSMC N2 technology will be the most advanced technology in the semiconductor industry in both density and energy efficiency, when it is introduced in 2025. N2 technology, with leading nanosheet transistor structure will deliver full-node performance and power benefits, to address the increasing need for energy-efficient computing. With our strategy of continuous enhancements, N2 and its derivatives will further extend our technology leadership well into the future.
